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By Thomas Ihn

This booklet treats 3 subject matters of digital quantum shipping in mesoscopic semiconductor buildings: the conductance in strongly interacting and disordered two-dimensional platforms and the steel insulator transition, electron delivery via quantum dots and quantum jewelry within the Coulomb-blockade regime, and scanning probe experiments on semiconductor nanostructures at cryogenic temperatures. moreover it provides a quick ancient account of electron shipping from Ohm's legislation via shipping in semiconductor nanostructures, and a assessment of cryogenic scanning probe strategies utilized to semiconductor nanostructures. either graduate scholars and researchers within the box of mesoscopic semiconductors or in semiconductor nanostructures will locate this e-book useful.

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The dashed and dash-dotted lines give the slopes expected for the power laws Te3 and Te5 . In summary, from the experimental findings presented above we have to conclude that the electric field scaling analysis is not sufficient evidence for the existence of a quantum phase transition in our samples. Heating of holes by the electric field turned out to mask the pure electric field effects. 3 Magnetoresistance measurements It was found in Ref. [168] that in the metallic regime weak localization (WL) reduces the metallic behavior without destroying it, whereas localizing interference corrections dominate the zero field resistivity in the insulating regime.

Such a linear temperature dependence has already been anticipated by Stern in 1980 [110]. Scattering at Friedel oscillations is the microscopic description of the physics behind transport theories that include temperature-dependent screening in the random-phase approximation (Lindhard screening) that have been widely used for the description of transport in two-dimensional systems [42, 110, 119–124]. For the special case of p-Si/SiGe quantum wells this theory was applied by Laikhtman and Kiehl [125].

These experimental findings are in remarkable agreement with those in other two-dimensional systems, such as the Si-MOSFETs and p-GaAs/AlGaAs structures [169]. In Fig. 2 we have compiled characteristic experimental data from various material systems following Ref. [163] for n-GaAs/AlGaAs heterostructures with InAs quantum dots in the two-dimensional electron gas, Ref. [210] for low-density n-GaAs/AlGaAs heterostructures, our data from Ref. [167] for p-SiGe quantum wells, Ref. [148] for Si-MOSFETs, and Refs.

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