Download e-book for iPad: FinFET Modeling for IC Simulation and Design: Using the by Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan

By Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ai Niknejad, Chenming Hu

This publication is the 1st to give an explanation for FinFET modeling for IC simulation and the normal – BSIM-CMG - describing the push prominent for advancing the expertise from planar to 3D structure, as now enabled through the licensed standard.

The ebook supplies a powerful beginning at the physics and operation of FinFET, info features of the BSIM-CMG version comparable to floor strength, cost and present calculations, and encompasses a committed bankruptcy on parameter extraction approaches, delivering a step by step process for the effective extraction of version parameters.

With this ebook you are going to learn:

  • Why you can use FinFET
  • The physics and operation of FinFET
  • Details of the FinFET usual version (BSIM-CMG)
  • Parameter extraction in BSIM-CMG
  • FinFET circuit layout and simulation
    • Authored by way of the lead inventor and developer of FinFET, and builders of the BSIM-CM commonplace version, offering an specialists’ perception into the necessities of the standard
    • The first ebook at the industry-standard FinFET version - BSIM-CMG

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    Read or Download FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard PDF

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    Extra resources for FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

    Sample text

    It is a strong function of L, the channel length, owing to the impact on both gm and go . FinFETs offer a clear advantage over bulk devices because they offer higher intrinsic gain for the same channel length, mainly due to the reduction in DIBL as noted above, since a dual gate structure can maintain better channel control over the drain. 1) is recast as the ratio of gm (gate control) and gds (drain control), which amplifies this point. It is interesting to observe that the device intrinsic gain depends on the device bias current.

    19 The circuit used to characterize the Gummel symmetry test. 3 Analog metrics Vds = 0 V. 30) 1 (Id (vx ) − Is (vx )). 31) For a properly designed compact model, we expect ix is a smooth function of vx with continuity at vx = 0 V, implying that dn ix /dvnx for all n. From physical considerations, we expect ix = 0 A at vx = 0 V, and also that d2 ix /dv2x = 0 due to the symmetry of waveform. 20, clearly demonstrating smooth and consistent behavior. In addition to the current behavior, the terminal charge behavior of the Gummel symmetry circuit should also satisfy physical conditions on symmetry and smoothness.

    This will produce a small kink in the transfer curve about Vds = 0 V, which requires smoothing. The Gummel symmetry test is used to detect potential symmetry problems in a FET model. 19 The circuit used to characterize the Gummel symmetry test. 3 Analog metrics Vds = 0 V. 30) 1 (Id (vx ) − Is (vx )). 31) For a properly designed compact model, we expect ix is a smooth function of vx with continuity at vx = 0 V, implying that dn ix /dvnx for all n. From physical considerations, we expect ix = 0 A at vx = 0 V, and also that d2 ix /dv2x = 0 due to the symmetry of waveform.

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