By Paul Leroux, Michiel Steyaert
LNA-ESD Co-Design for absolutely built-in CMOS instant Receivers suits within the quest for whole CMOS integration of instant receiver front-ends. With a mixed dialogue of either RF and ESD functionality, it tackles one of many ultimate hindrances at the street to CMOS integration. The publication is conceived as a layout advisor for these actively eager about the layout of CMOS instant receivers.
The e-book begins with a accomplished advent to the functionality specifications of low-noise amplifiers in instant receivers. numerous well known topologies are defined and in comparison with appreciate to destiny expertise and frequency scaling. The ESD requisites are brought and with regards to the state of the art safety units and circuits.
LNA-ESD Co-Design for totally built-in CMOS instant Receivers presents an intensive theoretical remedy of the functionality of CMOS low-noise amplifiers within the presence of ESD-protection circuitry. The effect of the ESD-protection parasitics on noise determine, achieve, linearity, and matching are investigated. a number of RF-ESD co-design suggestions are mentioned permitting either excessive RF-performance and sturdy ESD-immunity for frequencies as much as and past five GHz. exact consciousness can also be paid to the structure of either energetic and passive components.
LNA-ESD Co-Design for absolutely built-in CMOS instant Receivers deals the reader intuitive perception within the LNA?s habit, in addition to the mandatory mathematical historical past to optimize its functionality. All fabric is experimentally established with numerous CMOS implementations, between which a completely built-in GPS receiver front-end. The booklet is key interpreting for RF layout engineers and researchers within the box and is additionally appropriate as a textual content booklet for a complicated direction at the subject.
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Additional info for LNA-ESD co-design for fully integrated CMOS wireless receivers
Adding a cascode transistor as shown in Fig. 15(c) signiﬁcantly decreases the Miller effect rds2 where rds2 is the output since it is now decoupled from the gain of the circuit. If RL resistance of cascode transistor M2, then M =1+ gm1 ≈ 2. 80) One of the problems with this circuit is that RL needs to be large for a high gain. However this will cause a large DC voltage drop over RL . In order for the circuit to operate within parameters, the voltages over M1 and M2 need to be larger then VDS,sat = VGS − VT .
Parameter γ is one at zero VDS and — for long devices— decreases to a value of 2/3 in saturation. 8: Classical drain noise current for an NMOS transistor. 9: Schematic of induced gate noise current and the equivalent voltage. devices the effective temperature of the carriers is signiﬁcantly larger due to the high electric ﬁeld in the channel. γ values of 2, 3 and more have been reported [Lee98]. Since the electric ﬁeld for a ﬁxed device is proportional to the VDS it is important to keep this voltage as low as possible.
3 Non-Quasi Static Model The classical quasi static model of the MOS transistor behavior assumes that any change in charge at the gate is instantly reﬂected with an equal but opposite amount of charge in the channel. However, in reality there will always be a delay in the channel charge buildup. The physics of the MOS transistor tells us that the channel is built by means of inversion. Remember the behavior of the NMOS capacitor where the channel depletion starts when the gate voltage is increased above 0 V.