By Zheng Cui
Nanofabrication: ideas, features and boundaries offers a one-stop description on the introductory point on so much applied sciences which were constructed that are able to making constructions less than 100nm.
Principles of every know-how are brought and illustrated with minimal arithmetic concerned. The services of every expertise in making sub-100nm buildings are defined. the bounds of stopping a know-how from extra happening the dimensional scale are analyzed.
Drawing upon years of useful event and utilizing various examples, Zheng Cui covers state-of-the paintings applied sciences in nanofabrication including:
- Photon-based lithography
- Charged particle beams lithography
- Nanofabrication utilizing scanning probes
- Nanoscale replication
- Nanoscale trend move
- Indirect nanofabrication
- Nanofabrication through self-assembly
Nanofabrication: ideas, services and boundaries will function a realistic consultant and first-hand reference for researchers and practitioners operating in nanostructure fabrication and in addition presents a "tool field" of varied innovations that may be simply tailored in numerous fields of applications.
Written for: Nanoscience and nanotechnology researchers and engineers, technical execs and educational researchers within the fields of electrtonics, mechanical engineering, and chemical engineering.
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Additional resources for Nanofabrication: Principles, Capabilities and Limits
They are too narrow to be imaged on photoresist (which is the reason why they are called sub-resolution features), but the light passing through these bars can compensate the low intensity of light of the isolated line, so that the CDs of both dense lines and isolated lines are of the same width. Sub-resolution assist feature is a complementary technique to the OPC methods mentioned earlier. Sub-resolution assist feature is only workable if there are spaces nearby to allow placing them. Optical proximity correction has become a standard technique in sub-100 nm optical lithography.
18 mm IC technologies, they implicate the minimum linewidth of circuit feature in an IC chip. 1 Fig. 0 32 2 Nanofabrication by Photons represent the true integration level of an IC because it does not indicate how dense the circuit features are in an IC. In fact, it is much easier to achieve high resolution for single isolated line than for dense line/space pattern. Since the 2001 version of International Technology Roadmap for Semiconductors (ITRS), the ‘‘half-pitch’’ definition was introduced and became the benchmark for new generations of IC technology .
The Brewster’s angle B at which the polarization reflection occurs is expressed as Eq. 6, when light from one medium with refractive index n1 goes into another medium with refractive index n2. In the case of optical lithography, light goes from air (n1=1) to a photoresist layer (n2). tanðB Þ ¼ n2 : n1 (2:6) High-refractive-index photoresist will be able to tolerate imaging with highNA optics. 83, based on Eq. 2. Theoretically, further increase in NA can be tolerated by increasing the refractive index of photoresist, ignoring the difficulty and cost of making high-NA lenses.